Počet záznamů: 1

InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime

  1. 1.
    0359526 - FZU-D 2012 RIV NL eng J - Článek v odborném periodiku
    Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Vetushka, Aliaksi - Caha, O. - Hazdra, P. - Kuldová, Karla - Hulicius, Eduard
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime.
    Journal of Crystal Growth. Roč. 317, č. 1 (2011), s. 39-42 ISSN 0022-0248
    Grant CEP: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA MŠk LC510; GA ČR GA202/09/0676
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.726, rok: 2011

    InAs/GaAs quantum dot(QD)properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group III partial pressure in the reactor on the QD capping process and on the QD photoluminescence when the capping layer is grow nunder the kinetically limited regime. Two types of capping layers were prepared: GaAs and InGaAs. The GaAs capping layer growth rate decrease did not influence QD dissolution, but increased the dissolution of big hillocks. Influence of the GaAs capping layer thickness on QD photoluminescence is also demonstrated. The composition of the ternary strain reducing InGaAs capping layer can beconsiderably changed depending on the V/III ratio under kinetically limited growth.
    Trvalý link: http://hdl.handle.net/11104/0197302