Počet záznamů: 1
Photolithographic patterning of nanocrystalline europium-titanate Eu2Ti2O7 thin films on silicon substrates
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SYSNO ASEP 0482085 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Photolithographic patterning of nanocrystalline europium-titanate Eu2Ti2O7 thin films on silicon substrates Tvůrce(i) Mrázek, Jan (URE-Y) RID, ORCID
Boháček, Jan (URE-Y)
Vytykáčová, Soňa (URE-Y)
Buršík, Jiří (UFM-A) RID, ORCID
Puchý, V. (SK)
Robert, D. (SK)
Kašík, Ivan (URE-Y) RIDCelkový počet autorů 7 Zdroj.dok. Materials Letters. - : ELSEVIER SCIENCE BV - ISSN 0167-577X
Roč. 209, December (2017), s. 216-219Poč.str. 4 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova Magnetic materials ; Rare earth compounds ; Thin films ; Photolithography Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) Vědní obor RIV – spolupráce Ústav fyziky materiálu - Fyzika pevných látek a magnetismus Institucionální podpora URE-Y - RVO:67985882 ; UFM-A - RVO:68081723 UT WOS 000413124300055 EID SCOPUS 85026877637 DOI 10.1016/j.matlet.2017.08.013 Anotace Patterned highly transparent nanocrystalline europium-titanate Eu2Ti2O7 thin films with tailored structural properties were prepared by a sol-gel approach combined with a photolithography. The amorphous thin films on silicon substrates were prepared by the sol-gel approach. Patterns were written by a photolithography process followed by wet-etching and the samples were thermally annealed forming the pure nanocrystalline phase of Eu2Ti2O7. Written patterns were crack-free and longitudinally homogenous and their lateral dimensions remained unchanged during the annealing. The lowest width of written ribs was 10 mu m. The film thickness was approximately 540 nm and the films consist of uniform nanocrystals of the size approximately 50 nm. The results can be used for preparation of patterned thin films that are suitable for a construction of integrated spintronic devices Pracoviště Ústav fotoniky a elektroniky Kontakt Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Rok sběru 2018
Počet záznamů: 1