Počet záznamů: 1
Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure
- 1.0496160 - FZÚ 2019 RIV PL eng A - Abstrakt
Hájek, František - Zíková, Markéta - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří
Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 125-125.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * quantum wells * doping * luminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Trvalý link: http://hdl.handle.net/11104/0288966
Počet záznamů: 1