Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure

0496160 - FZÚ 2019 RIV PL eng A - Abstrakt
Hájek, František - Zíková, Markéta - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří
Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 125-125.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * quantum wells * doping * luminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Luminescence properties of InGaN/GaN multiple quantum wells (MQWs) are influenced by internal spontaneous and piezoelectric fields. These can be at least partially suppressed by doping with shallow impurities. This work shows impact of Si doping in different layers of MQWs on photoluminescence and cathodoluminescence of InGaN/GaN MQWs. To explain observed trends, band structure is also simulated. From our results emerges demand for Si doping at least under MQW area to obtain higher luminescence intensities. On the other hand, such doping also enhances unwanted defect luminescence which is detrimental for using InGaN MQWs as scintillation material.

Trvalý link: http://hdl.handle.net/11104/0288966