Počet záznamů: 1
Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur
- 1.Bagraev, N.T., Danilovskii, E.Y., Gets, D.S., Kalabukhova, E.N., Klyachkin, L.E., Koudryavtsev, A.A., Malyarenko, A.M., Mashkov, V.A., Savchenko, D., Shanina, B.D. Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur. Semiconductors. 2015, 49(5), 649-657. ISSN 1063-7826. E-ISSN 1090-6479. Dostupné z: doi: 10.1134/S1063782615050036
Počet záznamů: 1