Počet záznamů: 1  

Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur

  1. 1. 0448576 - FZU-D 2016 RIV RU eng J - Článek v odborném periodiku
    Bagraev, N.T. - Danilovskii, E.Yu. - Gets, D.S. - Kalabukhova, E.N. - Klyachkin, L.E. - Koudryavtsev, A.A. - Malyarenko, A.M. - Mashkov, V.A. - Savchenko, Dariia - Shanina, B.D.
    Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur.
    Semiconductors. Roč. 49, č. 5 (2015), 649-657 ISSN 1063-7826
    Grant CEP: GA ČR GP13-06697P; GA MŠk(CZ) LM2011029
    Grant ostatní:SAFMAT(XE) CZ.2.16/3.1.00/22132
    Institucionální podpora: RVO:68378271
    Klíčová slova: electron spin resonance * 6H-SiC nanostructures * silicon vacancy related centers * NV centers
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 0.701, rok: 2015

    We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency gen- eration from the δ-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method.
    Trvalý link: http://hdl.handle.net/11104/0250232