Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure

HÁJEK, F., ZÍKOVÁ, M., HOSPODKOVÁ, A., HUBÁČEK, T., OSWALD, J. Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure. In: Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018, s. 125-125.