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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur
- 1.BAGRAEV, N.T., DANILOVSKII, E.Yu., GETS, D.S., KALABUKHOVA, E.N., KLYACHKIN, L.E., KOUDRYAVTSEV, A.A., MALYARENKO, A.M., MASHKOV, V.A., SAVCHENKO, Dariia, SHANINA, B.D. Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur. Semiconductors. 2015, 49(5), 649-657. ISSN 1063-7826. E-ISSN 1090-6479. Dostupné z: doi: 10.1134/S1063782615050036
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