Počet záznamů: 1
Mechanism of the film composition formation during magnetron sputtering of WTi
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SYSNO ASEP 0185385 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Ostatní články Název Mechanism of the film composition formation during magnetron sputtering of WTi Tvůrce(i) Shaginyan, L. R. (UA)
Mišina, M. (CZ)
Kadlec, S. (CZ)
Jastrabík, L. (CZ)
Macková, Anna (UJF-V) RID, ORCID, SAI
Peřina, Vratislav (UJF-V) RIDZdroj.dok. Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films. - : AIP Publishing - ISSN 0734-2101
Roč. 19, č. 5 (2001), s. 2554-2566Poč.str. 13 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače CEP GV202/97/K038 GA ČR - Grantová agentura ČR KSK1010104 GA AV ČR - Akademie věd Anotace The WTi films were deposited by an unbalanced magnetron sputtering of a WTi (70:30 at. %) alloy target. The influence of the working gas (Ar) pressure, substrate bias, and substrate location on the composition of films was studied. The films deposited at low working gas pressures (<1 Pa) onto electrically floating substrates were largely depleted in Ti while the composition of films deposited at high argon pressure (25 Pa) was close to that of the target. The ion bombardment of the growing film resulted in a decreaseof the Ti content in the films. The composition of the films deposited simultaneously onto a pair of substrates placed at the axis and at the periphery of the target did not depend on the substrate position at both low and high pressure. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2002
Počet záznamů: 1