Počet záznamů: 1  

Mechanism of the film composition formation during magnetron sputtering of WTi

  1. 1.
    0185385 - UJF-V 20010112 RIV US eng J - Článek v odborném periodiku
    Shaginyan, L. R. - Mišina, M. - Kadlec, S. - Jastrabík, L. - Macková, Anna - Peřina, Vratislav
    Mechanism of the film composition formation during magnetron sputtering of WTi.
    Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films. Roč. 19, č. 5 (2001), s. 2554-2566. ISSN 0734-2101. E-ISSN 1520-8559
    Grant CEP: GA ČR GV202/97/K038; GA AV ČR KSK1010104
    Kód oboru RIV: BG - Jaderná, atomová a mol. fyzika, urychlovače
    Impakt faktor: 1.448, rok: 2001

    The WTi films were deposited by an unbalanced magnetron sputtering of a WTi (70:30 at. %) alloy target. The influence of the working gas (Ar) pressure, substrate bias, and substrate location on the composition of films was studied. The films deposited at low working gas pressures (<1 Pa) onto electrically floating substrates were largely depleted in Ti while the composition of films deposited at high argon pressure (25 Pa) was close to that of the target. The ion bombardment of the growing film resulted in a decreaseof the Ti content in the films. The composition of the films deposited simultaneously onto a pair of substrates placed at the axis and at the periphery of the target did not depend on the substrate position at both low and high pressure.
    Trvalý link: http://hdl.handle.net/11104/0081781

     
     

Počet záznamů: 1  

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