IR Laser Decomposition of 1,3-Disilacyclobutane in Presence of Carbon Disulfide: Chemical Vapour Deposition of Polythiacarbosilane

Počet záznamů: 1

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SYSNO ASEP	0104840
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	IR Laser Decomposition of 1,3-Disilacyclobutane in Presence of Carbon Disulfide: Chemical Vapour Deposition of Polythiacarbosilane
Title	IČ laserový rozklad 1,3-disilacyklobutanu v přítomnosti sirouhlíku: chemická deposice polythiakarbosilanu z plynné fáze
Author(s)	Urbanová, Markéta (UCHP-M)_{RID, SAI} Pola, Josef (UCHP-M)_{RID, ORCID, SAI}
Source Title	Journal of Organometallic Chemistry. - : Elsevier - ISSN 0022-328X Roč. 689, č. 16 (2004), s. 2697-2701
Number of pages	5 s.
Language	eng - English
Country	US - United States
Keywords	laser ; polythiacarbosilane ; chemical vapor deposition
Subject RIV	CC - Organic Chemistry
R&D Projects	ME 612 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
CEZ	AV0Z4072921 - UCHP-M
Annotation	TEA CO2 laser irradiation of gaseous mixtures of 1,3-disilacyclobutane ů carbon disulfide affords chemical vapour deposition of solid polythiacarbosilane films that possess Si-S-X ( X= Si, C), S-H and Si-H bonds and undergo slow hydrolysis in air to polyoxothiacarbosilanes containing Si-H, Si-O-Si and (C)S-H bonds. The formation of the polythiocarbosilane is proposed to take place via dehydrogenative polymerization of transient silene and incorporation of CS2 into formed polysilene network
Workplace	Institute of Chemical Process Fundamentals
Contact	Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227
Year of Publishing	2005

Počet záznamů: 1