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Lasers with thin strained InAs layers in GaAs absorption and electroluminescence
- 1.MAČKAL, A. Lasers with thin strained InAs layers in GaAs absorption and electroluminescence. In: Proceedings of the International Student Conference on Electrical Engineering. Praha: Faculty of Electrical Engineering CTU, 2003, s. EI20-EI21. Book of Extended Abstracts.
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