0100759 - UACH-T 20043006 RIV GB eng J - Článek v odborném periodiku
Buršík, Josef - Drbohlav, Ivo - Vaněk, Přemysl - Železný, Vladimír
Preparation of potassium tantalate thin films through chemical solution deposition.
[Příprava tenkých filmů tantalátu draselného metodou depozice z kapalné fáze.]
Journal of the European Ceramic Society. Roč. 24, č. 2 (2004), s. 455-462. ISSN 0955-2219. E-ISSN 1873-619X
Grant CEP: GA MŠMT LN00A028; GA MŠMT OC 528.001; GA ČR GA202/02/0238; GA ČR GA202/00/1245
Výzkumný záměr: CEZ:AV0Z4032918
Klíčová slova: chemical solution deposition * films * tantalates
Kód oboru RIV: CA - Anorganická chemie
Impakt faktor: 1.483, rok: 2004

Potassium tantalate (KT) KTaO3 thin films of both pyrochlore and perovskite cubic structures were prepared through the chemical solution deposition (CSD). A homogeneous and stable precursor solution was obtained from potassium iso-butoxide and tantalum iso-butoxide in absolute iso-butanol with an additive of diethanolamine as a stabilizer. The effects of K:Ta sol stoichiometry, type of substrate (both amorphous, and single crystal substrates), type of buffer interlayer [Al2O3, Y-stabilized ZrO2(YSZ), PbTiO3, PbTiO3-Al2O3 composite, KNbO3 (KN)], and annealing regime on the kinetics of pyrochlore to perovskite transition has been studied. KT perovskite films have been successfully prepared on (100)MgO, and (0001)Al2O3. Using SiO2 and Si substrates, perovskite films have been obtained via insertion of Al2O3 and KNbO3 buffer layers.

Film tantalatu draselneho byl pripraven metodou depozice z kapalne faze. Byl sledovan vliv stechiometrie K:Ta solu, typu podlozky, mezivrtsvy a zpusobu zpracovani na krystalizaci faze KT.
Trvalý link: http://hdl.handle.net/11104/0008250