Application of microscopy methods for characterization of silicon nanostructures

0488809 - FZÚ 2018 RIV JP eng A - Abstrakt
Hývl, Matěj - Müller, Martin - Foldyna, M. - Roca i Cabarrocas, P. - Fejfar, Antonín
Application of microscopy methods for characterization of silicon nanostructures.
Abstracts of The Sixth International Education Forum on Environment and Energy Science. Tokyo: Academy for Co-creative Education of Environment and Energy Science, Tokyo Institute of Technology, 2017. s. 1-1.
[The Sixth International Education Forum on Environment and Energy Science. 15.12.2017-19.12.2017, Tenerife, Canary Islands]
Grant CEP: GA MŠMT LM2015087; GA MŠMT 7AMB16FR040; GA ČR GB14-37427G
Institucionální podpora: RVO:68378271
Klíčová slova: C-AFM * Atomic force microscopy * radial junctions * nanowires * photovoltaics * silicon
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Given the rise of importance of nanostructures in the field of photovoltaics and electronics, necessity of nanometer-resolved characterization methods is increasing accordingly. While atomic force microscopy (AFM) measurements are currently widely used as a reliable tool for topographical characterization, situation is much more complicated in case of electrical techniques. In this work, we would like to present several examples of conductive AFM (C-AFM) application for solar cell characterization.
Trvalý link: http://hdl.handle.net/11104/0283347