Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures

0479300 - FZÚ 2018 RIV FR eng C - Konferenční příspěvek (zahraniční konf.)
Kuldová, Karla - Kretková, Tereza - Novotný, Radek - Hospodková, Alice - Zíková, Markéta - Pangrác, Jiří
Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures.
EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble, 2017 - (Eymery, J.), s. 40-40
[EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble (FR), 18.06.2017-21.06.2017]
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * GaN * photoluminescece * Raman spectroscopy * macroscopic defects
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

GaN and InGaN/GaN heterostructures are promising materials for many optoelectronic devices, such as light emitters, high-power and high-frequency electronics, detectors of ionizing radiation, scintillators. Great attention has been paid to optimize growth parameters and decrease density of dislocations and defects in this material. A little outside attention remains study of macroscopic defects. We focus on the influence of macroscopic defects on photoluminescence (PL) of GaN/InGaN multiple quantum well (MQW) structures and present a Raman spectroscopy study of these regions. Some GaN and InGaN/GaN samples exhibit large dark areas with PL decreasing by several orders of magnitude, in the centre of which is a structural defect. Traces of iron, stainless steel or oxides of iron were detected in majority of studied large dark areas by SEM microscopy with EDX and Raman spectroscopy.

Trvalý link: http://hdl.handle.net/11104/0275561