Počet záznamů: 1
A combined in situ RAS, in vacuo XPS and ab initio DFT study of the GaP/Si(100) heterointerface
- 1.0471306 - FZÚ 2017 RIV DE eng A - Abstrakt
Supplie, O. - May, M.M. - Romanyuk, Olexandr - Grosse, F. - Höhn, C. - Steinbach, G. - Stange, H. - Nägelein, A. - Müller, A. - Kleinschmidt, P. - Brückner, S. - Hannappel, T.
A combined in situ RAS, in vacuo XPS and ab initio DFT study of the GaP/Si(100) heterointerface.
International Conference on Internal Interfaces (ICII-2016). Program and Abstracts. Marburg: Philipps Universität Marburg, 2016. s. 94.
[International Conference on Internal Interfaces (ICII-2016). 31.05.2016-03.06.2016, Marburg]
Institucionální podpora: RVO:68378271
Klíčová slova: GaP/Si * MOVPE * heterointerface
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
We study the preparation and atomi order of the buried GaP/Si(001) heterointerfaces in situ with RAS, XPS, and ab initio DFT. We demonstrate that preparation of almost single domain Si(001) substrate succeeds in suppressing anti-phase disorder in GaP epitaxial layers.
Trvalý link: http://hdl.handle.net/11104/0268694
Počet záznamů: 1