Progress of vaccum deposition techniques for Si:H thin films structures

0471062 - FZÚ 2017 RIV CZ eng A - Abstrakt
Stuchlík, Jiří - Píč, Vlastimil - Stuchlíková, The-Ha - Purkrt, Adam - Remeš, Zdeněk
Progress of vaccum deposition techniques for Si:H thin films structures.
Development of Materials Science in Research and Education. Book of Abstracts of the 26th Joint Seminar. Praha: Institute of Physics of the Czech Academy of Sciences, v. v. i., 2016 - (Kožíšek, Z.; Král, R.; Zemenová, P.). s. 43. ISBN 978-80-905962-4-5.
[Joint Seminar Development of Materials Science in Research and Education /26./. 29.08.2016-02.09.2016, Pavlov]
Grant CEP: GA ČR GA13-12386S
Grant ostatní: AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: amorphous silicon * vaccum technology
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

For evaluation of new quality Si:H thin films we already used the samples deposited by two technological procedures, which allows the integration of convenient nanoparticles of different semiconductors into the Si:H structures. The first one is a combination of PECVD and Reactive Deposition Epitaxy (RDE) [1] and second one the PECVD and Reactive Laser Ablation (RLA). In both cases the current technology does not allow to deposit the whole diode structure without interruption of vacuum process. Up to now only in the case of PECVD and Vacuum Evaporation together with Plasma Treatment (VE+PT) the all in situ deposition processes where realized in special vacuum chamber. The actual results, namely the influence of integrated Mg2Si NPs on the electroluminescence and reached basic parameters - Voc, FF and Isc of diode structures measured under illumination will be introduced.
Trvalý link: http://hdl.handle.net/11104/0268524