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Self-Biased High-Responsivity Photodetector Based on a Bi2SeTe2 Topological Insulator
- 1.0578941 - ÚFCH JH 2024 RIV US eng J - Článek v odborném periodiku
Sahu, Satyam - Panda, Jaganandha - Haider, Golam - Frank, Otakar - Kalbáč, Martin - Velický, Matěj
Self-Biased High-Responsivity Photodetector Based on a Bi2SeTe2 Topological Insulator.
ACS Applied Electronic Materials. Roč. 5, č. 12 (2023), s. 6697-6703. E-ISSN 2637-6113
Grant CEP: GA ČR(CZ) GA22-04408S; GA ČR(CZ) GX20-08633X; GA MŠMT EF16_026/0008382
Grant ostatní: AV ČR(CZ) LQ200402201; Ministerstvo školství, mládeže a tělovýchovy - GA MŠk(CZ) CZ.02.1.01/0.0/0.0/16_026/0008382
Program: Prémie Lumina quaeruntur
Institucionální podpora: RVO:61388955
Klíčová slova: topological insulator * self-biased * photodetector
Obor OECD: Physical chemistry
Impakt faktor: 4.3, rok: 2023
Způsob publikování: Open access
Topological insulators show promise for high-performance optoelectronic applications due to their nonlinear optical properties, broad spectral absorption, ultrafast response to optical excitation, and excellent thermoelectric properties. Here, we introduce a self-biased photodetector based on the topological insulator Bi2SeTe2, driven by the photothermoelectric effect. Operating without external bias, the photodetector delivers a competitive visible-range photoresponse reaching responsivity of ≈27 mA/W and detectivity of ≈2 × 109 Jones at 458 nm. Comparable to individual topological insulators as well as topological insulator-based heterojunctions, this underscores Bi2SeTe2’s potential, especially in scenarios where external power sources cannot be used. Its self-biased nature eliminates the need for an external bias, making it an ideal material for low-power and remote-sensing applications.
Trvalý link: https://hdl.handle.net/11104/0347850
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