Depth profiling of AlN and Al.sub.x./sub. Ga .sub.1−x./sub. N crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

0570709 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Romanyuk, Olexandr - Brault, J. - Gordeev, Ivan - Ukraintsev, Egor - Houdková, Jana - Jiříček, Petr
Depth profiling of AlN and Al_x Ga _1−x N crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source.
Journal of Applied Physics. Roč. 133, č. 3 (2023), č. článku 035301. ISSN 0021-8979. E-ISSN 1089-7550
Grant CEP: GA MŠMT LM2018110; GA MŠMT LM2023051; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: AlN * AlGaN * MBE * XPS * depth profiling * chemical shifts
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.2, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1063/5.0125938

AlGaN-based heterostructures are promising candidates for the fabrication of ultraviolet light-emitting diodes. The analysis of the atomic composition of the grown epitaxial films is important from a technological point of view, allowing precise control over the wavelength and intensity of the emitted light. In this work, the depth profiling of AlN(0001), AlGaN(0001), and AlGaN quantum dot surfaces grown by molecular beam epitaxy was carried out by using angle-resolved x-ray photoelectron spectroscopy (XPS) combined with Ar gas cluster ion source (GCIS) sputtering. Depth profiling with a typical surface-sensitive Al Kα photon source is affected by the damaged layer. The application of a less surface-sensitive Ag Lα photon source with high photon energy could suppress the contribution from the damaged surface layer. Combining GCIS sputtering with Ag Lα is very promising for the quantification of atomic composition of heterostructures with thicknesses of several tens of nm.
Trvalý link: https://hdl.handle.net/11104/0342044