Selective ultrashort laser annealing of amorphous Ge/Si multilayer stacks

0569418 - FZÚ 2023 RIV FR eng C - Konferenční příspěvek (zahraniční konf.)
Bulgakova, Nadezhda M. - Volodin, V.A. - Cheng, Y. - Levy, Yoann - Beránek, Jiří - Nagisetty, Siva S. - Zukerstein, Martin - Popov, A. A. - Bulgakov, Alexander
Selective ultrashort laser annealing of amorphous Ge/Si multilayer stacks.
EPJ Web of Conferences. Vol. 266. Les Ulis: EDP Science, 2022, č. článku 06012. E-ISSN 2100-014X.
[EOS Annual Meeting (EOSAM 2022). Porto (PT), 12.09.2022-16.09.2022]
Institucionální podpora: RVO:68378271
Klíčová slova: laser crystallization * femtosecond and picosecomd laser * Raman scattering technique
Obor OECD: Optics (including laser optics and quantum optics)
https://www.epj-conferences.org/articles/epjconf/pdf/2022/10/epjconf_eosam2022_06012.pdf

Single-short las. crystalliz. of Ge/Si multilayer stacks consisting of alternating amorphous nanosized films of silicon and germanium using near- and mid-infrared femtosec. and picosec. las. pulses.The phase composition of the irradiated stacks was investigated by the Raman scattering technique.Several non-ablative regimes of crystalliz. were found,from partial crystalliz. of germanium without intermixing the Ge/Si layers to complete intermixing of the layers with formation of GexSi1-x solid alloys.The roles of one- and two-photon absorption,thermal and non-thermal melting processes,and laser-induced stresses in selective pico- and femtosecond laser annealing are analysed based on theoretical estimations and comparison with experimental data.It is concluded that,due to a mismatch of the thermal expansion coefficients between the adjacent stack layers,efficient explosive solid-phase crystallization of the Ge layers is possible at relatively low temperatures,well below the melting point.
Trvalý link: https://hdl.handle.net/11104/0340742