Detachment of epitaxial graphene from SiC substrate by XUV laser radiation

0525137 - FZÚ 2021 RIV US eng J - Článek v odborném periodiku
Vozda, Vojtěch - Medvedev, Nikita - Chalupský, Jaromír - Čechal, J. - Burian, Tomáš - Hájková, Věra - Juha, Libor - Krůs, M. - Kunc, J.
Detachment of epitaxial graphene from SiC substrate by XUV laser radiation.
Carbon. Roč. 161, May (2020), s. 36-43. ISSN 0008-6223. E-ISSN 1873-3891
Grant CEP: GA MŠMT LTT17015; GA MŠMT(CZ) LM2015083
GRANT EU: European Commission(XE) 654148 - LASERLAB-EUROPE
Výzkumná infrastruktura: CEITEC Nano - 90041
Institucionální podpora: RVO:68378271
Klíčová slova: epitaxial graphene * SiC substrate * graphene detachment * XUV laser radiation * method of ablative imprints * calcutation by XTANT code
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 9.594, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.carbon.2020.01.028

We present a novel technique where a sample with epitaxial graphene grown on SiC was exposed to intense 21.2 nm radiation. A sub-nanosecond pulse at low fluence in an interval 0.4-0.7 J/cm2 was used to break covalent sp3 bonds between the SiC substrate and buffer (the first graphene layer) which remains, except for release of its intrinsic strain, almost unaffected. A detailed analysis of the irradiated area examined by several microscopic and spectroscopic methods such as white-light interferometry and micro-Raman spectroscopy shows a clear evidence of a graphene layer detached from the substrate. Higher fluences induce damage to SiC substrate which expands due to the amorphization process. Damage thresholds were obtained by an advanced method of ablative imprints and compared with those calculated by the hybrid code XTANT.

Trvalý link: http://hdl.handle.net/11104/0309343