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Recovery of Waste Semiconductors for CVD Precursors.

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    0499651 - ÚCHP 2019 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
    Bumba, Jakub - Dytrych, Pavel - Fajgar, Radek - Dřínek, Vladislav
    Recovery of Waste Semiconductors for CVD Precursors.
    Proceedings of the 6th International Conference on Chemical Technology. Prague: Czech Society of Industrial Chemistry, 2018 - (Veselý, M.; Hrdlička, Z.; Hanika, J.; Lubojacký, J.), s. 427-431. ISBN 978-80-86238-77-7. ISSN 2336-8128.
    [International Conference on Chemical Technology /6./. Mikulov (CZ), 16.04.2018-18.04.2018]
    Grant CEP: GA ČR GA15-14228S
    Institucionální podpora: RVO:67985858
    Klíčová slova: semiconductor industry * waste photovoltaic panels * sythesis
    Kód oboru RIV: CI - Průmyslová chemie a chemické inženýrství
    Obor OECD: Chemical process engineering
    https://www.icct.cz/AngiologyKlon-ICCT/media/system/2018/ICCT-2018-Proceedings.pdf

    The newly patented method for regeneration of ultrapure silicon and germanium via magnesium silicide and magnesium germanide from waste photovoltaic (PV) cells, broken germanium lenses and waste magnesium chips was utilized to obtain chemical vapour deposition (CVD) precursors for application in electronics, optics or nanoparticles synthesis. Magnesium silicide and germanide were prepared directly by thermal synthesis from waste materials in optimized tube reactor at 400°C and 5 Pa. X-Ray Diffraction (XRD) confirmed 97.9% respective 95% purity of products. The presence of silicon and germanium hydrides (CVD precursors) prepared by acid hydrolysis in the second step of the process was verified by Gas Chromatography–Mass Spectroscopy (GC/MS) and Fourier Transform Infrared Spectroscopy (FTIR). The crude, unrefined mixture of silicon hydrides served as raw material for CVD experiment at different substrates. SEM images confirmed occurrence of various micro and nano particles which could be used in electronics, optics and catalysis.
    Trvalý link: http://hdl.handle.net/11104/0291890
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    SKMBT_C22019011614381.pdf182.4 MBVydavatelský postprintpovolen
     
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