Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition

0487097 - FZÚ 2018 RIV JP eng A - Abstrakt
Ižák, Tibor - Jirásek, Vít - Vanko, G. - Dzuba, J. - Babchenko, O. - Držík, M. - Kromka, Alexander
Thermally-induced stress in diamond-coated GaN membranes: influence of front- or back-side diamond deposition.
Book of Abstracts of International Symposium on Surface Science /8./ (ISSS-8). Tsukuba: SSSJ, 2017.
[International Symposium on Surface Science /8./ (ISSS-8). 22.10.2017-26.10.2017, Tsukuba]
Grant CEP: GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * GaN * Raman spectroscopy * stress
Obor OECD: Fluids and plasma physics (including surface physics)
http://www.sssj.org/isss8/timetable.html#poster-program

Here, we present technological issues in the deposition of diamond films as a heat spreader for GaN membranes. GaN membranes were fabricated by deep reactive ion etching of Si. Deposition of diamond on the “front” or “back-side” of GaN were performed by MWCVD. The thickness of deposited diamond films were 0.4, 3.5 and 12 um. The diamond/GaN heterostructures were studied in terms of thermally-induced stress analysis by Raman spectroscopy and FEM simulations. The stress was evaluated from the Raman shift of the diamond or GaN peak position within the temperature range from 50 to 400°C. The shift was measured at two positions: at the center and edge of the membrane. While in the case of bottom-side deposition the grown diamond layer was relatively homogeneous and covered the whole 3D hole (i.e. including its sidewalls), in the case of top-side deposition a thicker diamond layer was grown at the membrane center.

Trvalý link: http://hdl.handle.net/11104/0281778