Počet záznamů: 1  

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

  1. 1.
    0471006 - FZÚ 2017 RIV NL eng J - Článek v odborném periodiku
    Stuckelberger, J. - Nogay, G. - Wyss, P. - Jeangros, Q. - Allebe, Ch. - Debrot, F. - Niquille, X. - Ledinský, Martin - Fejfar, Antonín - Despeisse, M. - Haug, F.J. - Löper, P. - Ballif, C.
    Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells.
    Solar Energy Materials and Solar Cells. Roč. 158, Dec (2016), s. 2-10. ISSN 0927-0248. E-ISSN 1879-3398
    Grant CEP: GA MŠMT LM2015087
    Institucionální podpora: RVO:68378271
    Klíčová slova: surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 4.784, rok: 2016

    We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer.
    Trvalý link: http://hdl.handle.net/11104/0268491

     
     
Počet záznamů: 1  

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