0471006 - FZÚ 2017 RIV NL eng J - Článek v odborném periodiku
Stuckelberger, J. - Nogay, G. - Wyss, P. - Jeangros, Q. - Allebe, Ch. - Debrot, F. - Niquille, X. - Ledinský, Martin - Fejfar, Antonín - Despeisse, M. - Haug, F.J. - Löper, P. - Ballif, C.
Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells.
Solar Energy Materials and Solar Cells. Roč. 158, Dec (2016), s. 2-10. ISSN 0927-0248. E-ISSN 1879-3398
Grant CEP: GA MŠMT LM2015087
Institucionální podpora: RVO:68378271
Klíčová slova: surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 4.784, rok: 2016 ; AIS: 1.034, rok: 2016
DOI: https://doi.org/10.1016/j.solmat.2016.06.040

We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer.
Trvalý link: http://hdl.handle.net/11104/0268491