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Characterization of thin MnSi and MnGe Layers Prepared by Reactive UV Pulsed Laser Deposition.

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    0465309 - ÚCHP 2017 RIV CH eng J - Článek v odborném periodiku
    Koštejn, Martin - Fajgar, Radek - Dytrych, Pavel - Kupčík, Jaroslav - Dřínek, Vladislav - Jandová, Věra - Huber, Š. - Novotný, F.
    Characterization of thin MnSi and MnGe Layers Prepared by Reactive UV Pulsed Laser Deposition.
    Thin Solid Films. Roč. 619, NOV 30 (2016), s. 73-80. ISSN 0040-6090
    Grant CEP: GA ČR GC15-08842J
    Institucionální podpora: RVO:67985858
    Klíčová slova: diluted ferromagnetic semiconductor * reactive pulsed laser deposition * silicide
    Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
    Impakt faktor: 1.879, rok: 2016

    Reactive pulsed laser deposition is a technique suitable for producing homogenous thin layers of silicon or germanium with high concentration of embedded manganese atoms. Linear calibration of EDS (Energy Dispersive X-ray Spectroscopy) was utilized for an elemental analysis of thin layers. MnSi and MnGe (manganese-silicon and manganese-germanium) layers containing non-oxidized Mn were obtained for Mn molar concentration in the range from 15 to 50%. Electron diffraction showed an amorphous character of MnSi layers. MnGe layers contained two different types of nanoparticles incorporated inside an amorphous matrix. The layers were semiconducting with resistivities from 10−3 to 10−5 Ωm.
    Trvalý link: http://hdl.handle.net/11104/0266707
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