Počet záznamů: 1
Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films
- 1.0450317 - FZU-D 2016 RIV US eng J - Článek v odborném periodiku
Maryško, Miroslav - Hejtmánek, Jiří - Laguta, Valentyn - Sofer, Z. - Sedmidubský, D. - Šimek, P. - Veselý, M. - Mikulics, M. - Buchal, C. - Macková, Anna - Malinský, Petr - Wilhelm, R. A.
Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films.
Journal of Applied Physics. Roč. 117, č. 17 (2015), "17B907-1"-"17B907-4". ISSN 0021-8979
Grant CEP: GA ČR GA13-20507S; GA ČR(CZ) GBP108/12/G108; GA MŠk LM2011019
Institucionální podpora: RVO:68378271 ; RVO:61389005
Klíčová slova: magnetic field, * ferromagnetic and paramagnetic magnetization
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.101, rok: 2015
The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5x5mm2 were positioned in the classical straws and within an estimated accuracy of 10-6 emu, no ferromagnetic moment was detected in the temperature region of 2–300K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T=2K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion.
Trvalý link: http://hdl.handle.net/11104/0251648