0438857 - FZÚ 2015 RIV DE eng J - Článek v odborném periodiku
Ižák, Tibor - Babchenko, Oleg - Jirásek, Vít - Vanko, G. - Vallo, M. - Vojs, M. - Kromka, Alexander
Selective area deposition of diamond films on AlGaN/GaN heterostructures.
Physica Status Solidi B. Roč. 250, č. 12 (2014), 2574-2580. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA ČR(CZ) GP14-16549P
Institucionální podpora: RVO:68378271
Klíčová slova: circular high electron mobility transistors * diamond films * GaN substrates * microwave chemical vapor deposition * selective area deposition
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.469, rok: 2014 ; AIS: 0.483, rok: 2014
DOI: https://doi.org/10.1002/pssb.201451167

Here we present selective area diamond deposition on AlGaN/GaN layers focusing on the elimination of surface and metal contact damage (Ni, NiO, Ir,and IrO2) and suppressing the spontaneous nucleation of diamond. Metal contacts are important for further applications such as diamond-coated GaN based electronic devices. The growth of diamond films was performed by microwave chemical vapor deposition in different gas mixtures with the addition of CO2 or N2 to CH4/H2. Adding CO2 resulted in polycrystalline (PCD), while adding N2 led to the formation of nanocrystalline diamond film (NCD). The diamond deposition was carried out using selective area nucleation in a three-layer sandwich structure (polymer/seeding layer/polymer), which avoided damage to the electrode and GaN surfaces from ultrasonic seeding by diamond particles. No protective layer was used on the GaN surface before diamond deposition, i.e.,diamond films were grown directly on the AlGaN/GaN heterostructures.
Trvalý link: http://hdl.handle.net/11104/0242206