0185290 - UJF-V 20010017 RIV DE eng J - Článek v odborném periodiku
Nekvindová, P. - Špirková-Hradilová, J. - Schröfel, J. - Peřina, Vratislav
Erbium doping into lithium niobate and sapphire single crystal wafers.
Journal of Materials Research. Roč. 16, č. 2 (2001), s. 333-335. ISSN 0884-2914. E-ISSN 2044-5326
Grant CEP: GA ČR GA102/99/1391; GA AV ČR KSK1010104
Kód oboru RIV: BG - Jaderná, atomová a mol. fyzika, urychlovače
Impakt faktor: 1.539, rok: 2001

The possibility of localized doping by Er3+diffusion at moderate (less than 500 degreesC) temperature was for the first time demonstrated for sapphire single crystal wafers, The doping was achieved by immersing the substrate wafers into reaction melt containing small amounts of erbium salt. The crucial point of the presented technology was a crystallographic orientation of the used wafers, The most suitable orientation of the cuts was the "X-cut" with orientation (11-20). The strong anisotropy of the moderate temperature Er3+doping into lithium niobate and sapphire was explained on the basis of the crystal structure of particular cuts.
Trvalý link: http://hdl.handle.net/11104/0081697