0134596 - FZU-D 20030496 RIV NL eng J - Článek v odborném periodiku
Kočka, Jan - Fejfar, Antonín - Stuchlíková, The-Ha - Stuchlík, Jiří - Fojtík, Petr - Mates, Tomáš - Rezek, Bohuslav - Luterová, Kateřina - Švrček, Vladimír - Pelant, Ivan
Basic features of transport in microcrystalline silicon.
Solar Energy Materials and Solar Cells. Roč. 78, - (2003), s. 493-512. ISSN 0927-0248. E-ISSN 1879-3398
Grant CEP: GA AV ČR IAA1010809; GA AV ČR IAB2949101; GA ČR GA202/98/0669
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: charge transport * microcrystalline silicon * grain boundaries
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.188, rok: 2003

A simple model based on the concept of changes of transport path for description of the observed phenomena is reviewed and its consquences for charge collection in microcrystalline based solar cells are discussed.
Trvalý link: http://hdl.handle.net/11104/0032492