0133785 - FZU-D 20020064 RIV US eng J - Článek v odborném periodiku
Toušková, J. - Samochin, E. - Toušek, J. - Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Melichar, Karel - Šimeček, Tomislav
Photovoltage spectroscopy od InAs/GaAs quantum dot structures.
Journal of Applied Physics. Roč. 91, č. 12 (2002), s. 10103-10106. ISSN 0021-8979. E-ISSN 1089-7550
Grant CEP: GA ČR GA102/99/0414; GA ČR GA202/99/1613
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: self-assembled quantum dots * surface photovoltage spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.281, rok: 2002

We have shown that surface photovoltage spectroscopy can be used for the study of single as well as multiple quantum dot structures. Large dots were observed by photovoltage spectroscopy. They are created in the case of stacked QDs in structures with thin spacer layer.
Trvalý link: http://hdl.handle.net/11104/0031741