0133756 - FZU-D 20020137 RIV DE eng J - Článek v odborném periodiku
Vorlíček, Vladimír - Moiseev, K. D. - Mikhailova, M. P. - Yakovlev, Yu. P. - Hulicius, Eduard - Šimeček, Tomislav
Raman scattering study of type II GaInAsSb/InAs heterostructures.
Crystal Research and Technology. Roč. 37, 2-3 (2002), s. 259-267. ISSN 0232-1300. E-ISSN 1521-4079
Grant CEP: GA ČR GA102/99/0414
Grant ostatní: GA-(RU) 990218330
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: III-V alloy compound semiconductors * phonons * Raman spectra liquid phase epitaxy * midinifrared optoelectronics
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.505, rok: 2002

Ga_1-xIn_xAs_ySb_1-y quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in range 0.06óxó0.22 were grown by liquid phase epitaxy. The assignment of the observed modes to GaAs-like and (GaSb+InAS)-like mixture modes is discussed.
Trvalý link: http://hdl.handle.net/11104/0031715