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Electrostatic screening in integral quantum Hall regime
- 1.0133675 - FZU-D 20010475 RIV DE eng C - Konferenční příspěvek (zahraniční konf.)
Mareš, Jiří J. - Krištofik, Jozef - Hubík, Pavel
Electrostatic screening in integral quantum Hall regime.
3-540-41778-8. In: Proceedings of the 25th International Conference on the Physics of Semiconductors. Berlin: Springer, 2001 - (Miura, N.; Ando, T.), s. 1005-1006. Springer proceedings in physics., 87. ISSN 0930-8989.
[International Conference on the Physics of Semiconductors /25./. Osaka (JP), 19.09.2000-22.09.2000]
Grant CEP: GA AV ČR IAA1010806; GA AV ČR IAA1010807; GA ČR GA202/99/0410
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: quantum well * quantum Hall effect * heterodimensinal junctions * magnetocapacitance measurement
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Results obtained by the electric field penetration method are analysed. In the integral quantum Hall effect regime a topological phase transition takes place which is due to the intrinsic disorder of dopants in the source layer in the vicinity of the quantum well.
Trvalý link: http://hdl.handle.net/11104/0031638
Počet záznamů: 1