0133654 - FZU-D 20010454 RIV PL eng J - Článek v odborném periodiku
Mašek, Jan - Máca, František
Self-compensating incorporation of Mn in Ga_1-xMn_xAs.
Acta Physica Polonica A. Roč. 100, č. 3 (2001), s. 319-325. ISSN 0587-4246. E-ISSN 1898-794X.
[International School of Semiconducting Compounds /30./. Jaszowiec, 00.00.2001]
Grant CEP: GA MŠMT OC P3.80
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: hypotetical Ga1-xMnxAs * electronic structure
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.475, rok: 2001

We consider hypothetical Ga_7MnAs8, Ga_16MnAs16, and Ga_14Mn3As_{16 crystals with Mn in a substitutional, interstitial, and both positions. Spin-polarized full-potential linearized augmunted plane wave calculations were used to obtain their electronic structure.
Trvalý link: http://hdl.handle.net/11104/0031617}