0133391 - FZU-D 20010188 RIV CH eng J - Článek v odborném periodiku
Kočka, Jan - Stuchlíková, Hana - Stuchlík, Jiří - Rezek, Bohuslav - Švrček, Vladimír - Fojtík, Petr - Pelant, Ivan - Fejfar, Antonín
Microcrystalline silicon - relation between transport and microstructure.
Solid State Phenomena. 80-81, - (2001), s. 213-224. ISSN 1012-0394
Grant CEP: GA ČR GA202/98/0669; GA AV ČR IAA1010809
Výzkumný záměr: CEZ:A02/98:Z1-010-914
Klíčová slova: microcrystalline silicon * transport * microstructure
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.511, rok: 2001

Intrinsic microcrystalline silicon samples were prpared close to the border between microcrystalline and amorphous grouwth in order to obtain a thick transition layer which allowed a detailed study of relation of transport and microstructure.
Trvalý link: http://hdl.handle.net/11104/0031360