Počet záznamů: 1

Unconventional Imaging with Backscattered Electrons

  1. 1.
    0367773 - UPT-D 2012 RIV US eng J - Článek v odborném periodiku
    Müllerová, Ilona - Mikmeková, Šárka - Hovorka, Miloš - Frank, Luděk
    Unconventional Imaging with Backscattered Electrons.
    Microscopy and Microanalysis. Roč. 17, Suppl. 2 (2011), s. 900-901 ISSN 1431-9276
    Výzkumný záměr: CEZ:AV0Z20650511
    Klíčová slova: SEM * low energies * grain contrast * dopant contrast * internal stress
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
    Impakt faktor: 3.007, rok: 2011

    Immesrsion of the sample in a scanning electron microscope to strong electric field enables one to acquire the backscattered electrons (BSE) throughout full energy and angle range of emission. BSE emitted at high angles off the surface normal provide extended crystallographic information with high grain contrast sensitive to details including visualization of the internal stress. At very low energies the BSE yield may serve as fingerprinting the grain orientation. The dopant contrast can be obtained via injection of very slow electrons.
    Trvalý link: http://hdl.handle.net/11104/0202327