Počet záznamů: 1

Mapping of dopants in silicon by injection of electrons

  1. 1.
    0367280 - UPT-D 2012 RIV DE eng C - Konferenční příspěvek (zahraniční konf.)
    Hovorka, Miloš - Konvalina, Ivo - Frank, Luděk - Mikulík, P.
    Mapping of dopants in silicon by injection of electrons.
    MC 2011 - Microscopy Conference Kiel. Kiel: DGE, 2011, IM7.P198:1-2. ISBN 978-3-00-033910-3.
    [MC 2011 - Microscopy Conference. Kiel (DE), 28.08.2011-02.09.2011]
    Grant CEP: GA AV ČR IAA100650902; GA ČR GAP108/11/2270
    Výzkumný záměr: CEZ:AV0Z20650511
    Klíčová slova: dopant * silicon * scanning electron microscopy
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

    Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability has been verified and the method was extended to very low energies where dynamical changes in the contrast have been observed.
    Trvalý link: http://hdl.handle.net/11104/0202020