Počet záznamů: 1

Development of n-on-p silicon sensors for very high radiation environments

  1. 1.
    0361396 - FZU-D 2013 RIV NL eng J - Článek v odborném periodiku
    Unno, Y. - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Böhm, Jan - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. - Mikeštíková, Marcela
    Development of n-on-p silicon sensors for very high radiation environments.
    Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S24"-"S30" ISSN 0168-9002
    Grant CEP: GA MŠk LA08032
    Výzkumný záměr: CEZ:AV0Z10100502
    Klíčová slova: silicon * micro-strip * ATLAS * SLHC * sensor * radiation damage * p-type * n-in-p
    Kód oboru RIV: BF - Elementární částice a fyzika vys. energií
    Impakt faktor: 1.207, rok: 2011
    http://dx.doi.org/10.1016/j.nima.2010.04.080

    We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1×1015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm×9.75 cm large-area sensor and several 1 cm×1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage.
    Trvalý link: http://hdl.handle.net/11104/0198717