Počet záznamů: 1

Femtosecond luminescence spectroscopy of core states in silicon nanocrystals

  1. 1.
    0356926 - FZU-D 2011 RIV US eng J - Článek v odborném periodiku
    Žídek, K. - Trojánek, F. - Malý, P. - Ondič, Lukáš - Pelant, Ivan - Dohnalová, Kateřina - Šiller, L. - Little, R. - Horrocks, B.R.
    Femtosecond luminescence spectroscopy of core states in silicon nanocrystals.
    Optics Express. Roč. 18, č. 24 (2010), s. 25241-25249 ISSN 1094-4087
    Grant CEP: GA AV ČR KAN400100701; GA AV ČR(CZ) IAA101120804; GA MŠk LC510
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: silicon nanocrystals * ultrafast spectroscopy * photoluminescence spectroscopy
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 3.749, rok: 2010
    http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-24-25241

    We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation.
    Trvalý link: http://hdl.handle.net/11104/0195319