Počet záznamů: 1

Growth and scintillation properties of Sc, Pr, Ce co-doped LuAG epitaxial layers

  1. 1.
    0356352 - FZU-D 2011 RIV GB eng C - Konferenční příspěvek (zahraniční konf.)
    Kučera, M. - Průša, Petr - Mareš, Jiří A. - Nikl, Martin - Nitsch, Karel - Hanuš, M. - Onderišinová, Z. - Kučerková, Romana
    Growth and scintillation properties of Sc, Pr, Ce co-doped LuAG epitaxial layers.
    EURODIM 2010. Proceedings of 11th Europhysical Conference on Defects in Insulating Materials. Bristol: IOP Publishing, 2010, 012012/1-012012/9. IOP Conference Series: Materials Science and Engineering, vol. 15. ISSN 1757-8981.
    [Europhysical Conference on Defects in Insulating Materials /11./ (EURODIM 2010). Pecs (HU), 12.07.2010-16.07.2010]
    Grant CEP: GA AV ČR KAN300100802
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: scintillation * epitaxial layers * Sc * Pr * Ce dopants * LuAG garnet
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    http://dx.doi.org/10.1088/1757-899X/15/1/012012

    Single crystalline Sc, Pr, Ce co-doped Lu3Al5O12 garnet layers were grown by liquid phase epitaxy. The Sc doping increases the scintillation response of Pr3+ activator ions because of overlap of the Sc-related emission around 275 nm with the 4f--5d absorption band of Pr3+ centers.
    Trvalý link: http://hdl.handle.net/11104/0194894