Počet záznamů: 1

Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects

  1. 1.
    0355867 - FZU-D 2011 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
    Dubecký, F. - Ladzianský, M. - Kindl, Dobroslav - Nečas, V.
    Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects.
    ASDAM 2010. Piscataway: IEEE, 2010 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 207-210. ISBN 978-1-4244-8572-7.
    [ASDAM 2010 - The Eight International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle (SK), 25.10.2010-27.10.2010]
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: SI GaAs detectors * neutron bombardment * deep levels * PICTS
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

    Degradation of semi-insulating GaAs detectors after fast neutron bombardment was investigated by means of I-V and PICTS measurements. Significant rise of detector reverse current as well as formation of dominating neutron-induced deep-level complex defect is observed at high neutron fluencies.
    Trvalý link: http://hdl.handle.net/11104/0006319