Počet záznamů: 1

Comment on "Current routes in hydrogenated microcrystalline silicon"

  1. 1.
    0355032 - FZU-D 2011 RIV US eng J - Článek v odborném periodiku
    Vetushka, Aliaksi - Fejfar, Antonín - Ledinský, Martin - Rezek, Bohuslav - Stuchlík, Jiří - Kočka, Jan
    Comment on "Current routes in hydrogenated microcrystalline silicon".
    Physical Review. B. Roč. 81, č. 23 (2010), 237301/1-237301/4 ISSN 1098-0121
    Grant CEP: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAA100100902
    GRANT EU: European Commission(XE) 240826 - PolySiMode
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: conductive atomic force microscopy * oxidation * microcrystalline silicon
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 3.772, rok: 2010

    We show that local currents observed by the conductive atomic force microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of local anodic oxidation. The tip-induced oxidation changes character of the local current maps, either in repeated scans or even in the first scan of a pristine surface. In particular, the preoxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings, previously interpreted as an evidence of the main transport route at the grain boundaries in microcrystalline silicon. We also show that stripping of the surface oxide by HF etch restores the local currents to the values corresponding to C-AFM done in ultra-high-vacuum on in situ deposited samples.
    Trvalý link: http://hdl.handle.net/11104/0193885