Počet záznamů: 1

Effect of Fe doping on the terahertz conductivity of GaN single crystals

  1. 1.
    0354453 - FZU-D 2011 RIV GB eng J - Článek v odborném periodiku
    Kadlec, Filip - Kadlec, Christelle - Paskova, T. - Evans, K.
    Effect of Fe doping on the terahertz conductivity of GaN single crystals.
    Journal of Physics D-Applied Physics. Roč. 43, č. 14 (2010), 145401/1-145401/5 ISSN 0022-3727
    Výzkumný záměr: CEZ:AV0Z10100520
    Klíčová slova: gallium nitride * terahertz spectroscopy * iron doping
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 2.105, rok: 2010

    Bulk single crystals of GaN with different degrees of Fe doping were studied using time-domain terahertz spectroscopy at high temperatures. Features due to free carriers were observed in the complex permittivity spectra with a pronounced dependence on both doping and temperature. Fitting the spectra using the Drude model made it possible to deduce a defect ionization energy of 16 meV in the undoped sample while the spectra of doped samples are consistent with an ionization energy of 60 meV. Also, the free carrier concentrations at temperatures from 300 to 900 K were estimated.
    Trvalý link: http://hdl.handle.net/11104/0193451