Počet záznamů: 1
Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors
- 1.0353864 - FZÚ 2011 RIV US eng J - Článek v odborném periodiku
Vašek, Petr - Svoboda, Pavel - Novák, Vít - Cukr, Miroslav - Výborný, Karel - Jurka, Vlastimil - Stuchlík, Jiří - Orlita, Milan - Maude, D. K.
Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors.
Journal of Superconductivity and Novel Magnetism. Roč. 23, č. 6 (2010), 1161-1163. ISSN 1557-1939. E-ISSN 1557-1947
Grant CEP: GA AV ČR KAN400100652; GA MŠMT MEB020928
Grant ostatní: EU EuroMagNET II(XE) Egide 19535NF
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: GaMnAs * anisotropic magnetoresistance * hydrogenation
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.014, rok: 2010
The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Differend behaviour of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of stain during treatment.
Trvalý link: http://hdl.handle.net/11104/0192992
Počet záznamů: 1