Počet záznamů: 1

Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

  1. 1.
    0353864 - FZU-D 2011 RIV US eng J - Článek v odborném periodiku
    Vašek, Petr - Svoboda, Pavel - Novák, Vít - Cukr, Miroslav - Výborný, Karel - Jurka, Vlastimil - Stuchlík, Jiří - Orlita, Milan - Maude, D. K.
    Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors.
    Journal of Superconductivity and Novel Magnetism. Roč. 23, č. 6 (2010), 1161-1163 ISSN 1557-1939
    Grant CEP: GA AV ČR KAN400100652; GA MŠk MEB020928
    Grant ostatní: EU EuroMagNET II(XE) Egide 19535NF
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: GaMnAs * anisotropic magnetoresistance * hydrogenation
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.014, rok: 2010

    The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Differend behaviour of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of stain during treatment.
    Trvalý link: http://hdl.handle.net/11104/0192992