Počet záznamů: 1

Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

  1. 1.
    0349214 - FZU-D 2011 RIV DE eng J - Článek v odborném periodiku
    Romanyuk, Olexandr - Grosse, F. - Braun, W.
    Ab initio study of one-dimensional disorder on III-V semiconductor surfaces.
    Physica Status Solidi C: Current Topics in Solid State Physics. Roč. 7, č. 2 (2010), s. 330-333 ISSN 1862-6351
    Grant CEP: GA AV ČR KAN300100802
    Grant ostatní: German Resarch Fondation(DE) GZ:436 TSE 113/62/0-1
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: atomic disorder * ab initio * semiconductor * reconstruction
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

    Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001)and GaAs(001) reconstructions. Deviations in bond lengths due to disorder with respect to the ordered ground state phases are calculated.
    Trvalý link: http://hdl.handle.net/11104/0189514