Počet záznamů: 1

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

  1. 1.
    0342123 - FZU-D 2011 RIV RU eng J - Článek v odborném periodiku
    Mikhailova, M. P. - Ivanov, E.V. - Moiseev, K. D. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Šimeček, Tomislav
    Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface.
    Semiconductors. Roč. 44, č. 1 (2010), 66-71 ISSN 1063-7826
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: electroluninescence * MOVPE * GaSb * InAs * quantum well
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 0.603, rok: 2010

    Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface grown by MOVPE are studied. Intense positive and negative luminescence was observed in the range of photon energies of 0.3-0.4 eV with a forward and reverse bias, respectively. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3-4 μm.
    Trvalý link: http://hdl.handle.net/11104/0184942