Počet záznamů: 1

LPE growth of InP layers from rare-earth treated melts for radiation detector structures

  1. 1.
    0341444 - URE-Y 2010 RIV CH eng J - Článek v odborném periodiku
    Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
    LPE growth of InP layers from rare-earth treated melts for radiation detector structures.
    Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 165, 1-2 (2009), s. 94-97 ISSN 0921-5107
    Grant CEP: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
    Výzkumný záměr: CEZ:AV0Z20670512
    Klíčová slova: semiconductor technology * rare earth elements * III-V semiconductors
    Kód oboru RIV: JJ - Ostatní materiály
    Impakt faktor: 1.715, rok: 2009

    Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to REs high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP layers by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors.
    Trvalý link: http://hdl.handle.net/11104/0184438