Počet záznamů: 1

Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

  1. 1.
    0341441 - URE-Y 2010 RIV NL eng J - Článek v odborném periodiku
    Vaniš, Jan - Zelinka, Jiří - Malina, Václav - Henini, M. - Pangrác, Jiří - Melichar, Karel - Hulicius, Eduard - Šroubek, Filip - Walachová, Jarmila
    Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE.
    Microelectronics Journal. Roč. 40, č. 3 (2009), s. 496-498 ISSN 0026-2692
    Grant CEP: GA ČR GA202/05/0242
    Výzkumný záměr: CEZ:AV0Z20670512; CEZ:AV0Z10100521; CEZ:AV0Z10750506
    Klíčová slova: quantum dots * ballistic transport * semiconductor heterojunction
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 0.778, rok: 2009

    Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed.
    Trvalý link: http://hdl.handle.net/11104/0184437