Počet záznamů: 1

Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling

  1. 1.
    0341424 - UPT-D 2010 RIV US eng J - Článek v odborném periodiku
    Kettle, J. - Whitelegg, S. - Song, M. - Madec, M. B. - Yeates, S. - Turner, M. L. - Kotačka, L. - Kolařík, Vladimír
    Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling.
    Journal of Vacuum Science & Technology B. Roč. 27, č. 6 (2009), s. 2801-2804 ISSN 1071-1023
    Grant CEP: GA ČR GA102/05/2325
    Výzkumný záměr: CEZ:AV0Z20650511
    Klíčová slova: argon * milling * nanolithography * organic semiconductors * semiconductor diodes
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
    Impakt faktor: 1.460, rok: 2009

    In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range.
    Trvalý link: http://hdl.handle.net/11104/0184421