Počet záznamů: 1

On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films

  1. 1.
    0341419 - UACH-T 2010 RIV NL eng J - Článek v odborném periodiku
    Gutwirth, J. - Wágner, T. - Bezdička, Petr - Hrdlička, M. - Vlček, Milan - Frumar, M.
    On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films.
    Journal of Non-Crystalline Solids. Roč. 355, 37-42 (2009), s. 1935-1938 ISSN 0022-3093
    Grant CEP: GA MŠk LC523; GA ČR GA203/06/1368
    Výzkumný záměr: CEZ:AV0Z40320502; CEZ:AV0Z40500505
    Klíčová slova: amorphous semiconductors * films and coatings * sputtering
    Kód oboru RIV: CA - Anorganická chemie
    Impakt faktor: 1.252, rok: 2009

    Thin amorphous films of Ge-Sb-Te were deposited from Ge2Sb2Te5 target by RF (f=13.56 MHz) magnetron sputtering in argon plasma. Composition and chemical homogeneity of target and prepared thin films were traced by Energy Dispersive X-ray Analysis coupled with Scanning Electron Microscope (SEM-EDX). SEM technique was also used for surface morphology observation. Crystallinity of target and prepared thin films was studied by X-ray Diffraction (XRD). Optical parameters of prepared thin films (spectral dependence of refractive index, optical band gap energy E-g(opt)) and film thicknesses were established via Variable Angle Spectroscopic Ellipsometry (VASE) supported by UV-Vis-NIR spectroscopy. Influence of deposition conditions (RF power, At pressure, angle divergency from normal direction) to composition, crystallinity, optical properties and deposition rate was established.
    Trvalý link: http://hdl.handle.net/11104/0184416